Silicon Carbide Coated Graphite Components for SiC Epitaxy

It primarily addresses high‑temperature corrosion and contamination—such as the tendency of conventional graphite to oxidize and pulverize in oxygen‑containing environments. In etching processes, SiC coatings resist corrosive gases like Cl₂ and CF₄, protecting the chamber structure. This reduces the risk of particle shedding, extends component lifetimes by 3–5 times, and lowers equipment maintenance costs.

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CVD-SiC Coating

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A SiC coating is deposited on the surface of graphite epitaxial components to primarily address high‑temperature corrosion and contamination—such as the tendency of conventional graphite to oxidize and pulverize in oxygen‑containing environments. During etching processes, the SiC coating shields against corrosive gases like Cl₂ and CF₄, protecting the chamber structure. By reducing the risk of particle shedding, the coating extends component life by 3–5 times and lowers equipment maintenance costs. The coating also prevents impurities—such as metal ions and carbon particles—from being released from the graphite substrate, thereby averting contamination of the epitaxial layer and ensuring that the defect density of SiC epitaxial wafers remains below 1/cm² (e.g., triangular defects and dislocations).

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